the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all products and/or types are available in every country. please check with an nec electronics sales representative for availability and additional information. mos field effect transistor 2sK3642 switching n-channel power mos fet data sheet document no. d15970ej4v0ds00 (4th edition) date published january 2005 ns cp(k) printed in japan 2002 the mark shows ma j or revised p oints. ordering information part number package 2sK3642-zk to-252 (mp-3zk) description the 2sK3642 is n-channel mos fe t device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as dc/dc converter with synchronous rectifier. features ? low on-state resistance r ds(on)1 = 9.5 m ? max. (v gs = 10 v, i d = 32 a) r ds(on)2 = 16 m ? max. (v gs = 4.5 v, i d = 18 a) ? low c iss : c iss = 1100 pf typ. ? built-in gate protection diode absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 30 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25c) i d(dc) 64 a drain current (pulse) note1 i d(pulse) 190 a total power dissipation (t c = 25c) p t1 36 w total power dissipation p t2 1.0 w channel temperature t ch 150 c storage temperature t stg ?55 to + 150 c single avalanche current note2 i as 25 a single avalanche energy note2 e as 62 mj notes 1. pw 10 s, duty cycle 1% 2. starting t ch = 25c, v dd = 15 v, r g = 25 ? , l = 100 h, v gs = 20 0 v (to-252)
data sheet d15970ej4v0ds 2 2sK3642 electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 10 a gate leakage current i gss v gs = 20 v, v ds = 0 v 10 a gate cut-off voltage v gs(off) v ds = 10 v, i d = 1 ma 1.5 2.5 v forward transfer admittance note | y fs | v ds = 10 v, i d = 32 a 13 26 s drain to source on-state resistance note r ds(on)1 v gs = 10 v, i d = 32 a 7.6 9.5 m ? r ds(on)2 v gs = 4.5 v, i d = 18 a 10.8 16 m ? input capacitance c iss 1100 pf output capacitance c oss 410 pf reverse transfer capacitance c rss v ds = 10 v v gs = 0 v f = 1 mhz 150 pf turn-on delay time t d(on) 9.6 ns rise time t r 5.1 ns turn-off delay time t d(off) 38 ns fall time t f v dd = 15 v, i d = 32 a v gs = 10 v r g = 10 ? 10 ns total gate charge q g 23 nc gate to source charge q gs 4.3 nc gate to drain charge q gd v dd = 24 v v gs = 10 v i d = 64 a 6 nc body diode forward voltage note v f(s-d) i f = 64 a, v gs = 0 v 1.0 v reverse recovery time t rr i f = 64 a, v gs = 0 v 31 ns reverse recovery charge q rr di/dt = 100 a/ s 25 nc note pulsed: pw 350 s, duty cycle 2% test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 ? 50 ? d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 ? d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
data sheet d15970ej4v0ds 3 2sK3642 typical characteristics (t a = 25 c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 t c - case temperature - c p t - total power dissipation - w 0 10 20 30 40 50 0 25 50 75 100 125 150 175 t c - case temperature - c forward bias safe operating area i d - drain current - a 0.1 1 10 100 1000 0.1 1 10 100 i d(pulse) t c = 25 c single pulse 10 ms power dissipation limited i d(dc) pw = 100 s 10 s 1 ms dc r ds(on) lim ited (at v gs = 10 v) v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 single pulse r th(ch-a) = 125 c/w r th(ch-c) = 3.47 c/w pw - pulse width - s 10 100 1 m 10 m 100 m 1 10 100 1000
data sheet d15970ej4v0ds 4 2sK3642 drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 50 100 150 200 250 0123 v gs = 10 v pulsed 4.5 v v ds - drain to source voltage - v i d - drain current - a 0.01 0.1 1 10 100 1000 012345 t ch = ? 55 c 25 c 75 c 150 c v ds = 10 v pulsed v gs - gate to source voltage - v gate cut-off voltage vs. channel temperature forward transfer admittance vs. drain current v gs(off) - gate cut-off voltage - v 0 0.5 1 1.5 2 2.5 3 -50 0 50 100 150 v ds = 10 v i d = 1 ma t ch - channel temperature - c | y fs | - forward transfer admittance - s 0.1 1 10 100 0.1 1 10 100 t ch = ? 55 c 25 c 75 c 150 c v ds = 10 v pulsed i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m ? . ? 0 5 10 15 20 25 30 0 5 10 15 20 i d = 32 a pulsed v gs - gate to source voltage - v
data sheet d15970ej4v0ds 5 2sK3642 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m ? . . . . ? i d - drain current - a v ds - drain to source voltage - v 0 5 10 15 20 25 30 0 5 10 15 20 25 0 2 4 6 8 10 12 v ds v dd = 24 v 15 v i d = 64 a v gs q g - gate charge - nc v gs - gate to source voltage - v source to drain diode forward voltage reverse recovery time vs. diode forward current i f - diode forward current - a 0.01 0.1 1 10 100 1000 00.511.5 v gs = 10 v 0 v pulsed v f(s-d) - source to drain voltage - v t rr - reverse recovery time - ns 1 10 100 1000 0.1 1 10 100 di/dt = 100 a/ s v gs = 0 v i f - diode forward current - a
data sheet d15970ej4v0ds 6 2sK3642 single avalanche current vs. inductive load single avalanche energy derating factor i as - single avalanche current - a 0.1 1 10 100 0.01 0.1 1 10 e as = 62 mj i as = 25 a v dd = 15 v v gs = 20 0 v r g = 25 ? starting t ch = 25 c l - inductive load - mh energy derating factor - % 0 20 40 60 80 100 120 25 50 75 100 125 150 v dd = 15 v v gs = 20 0 v r g = 25 ? i as 25 a starting t ch - starting channel temperature - c
data sheet d15970ej4v0ds 7 2sK3642 package drawing (unit: mm) to-252 (mp-3zk) 6.5 0.2 2.3 0.1 0.5 0.1 0.76 0.12 0 to 0.25 0.5 0.1 1.0 no plating no plating 5.1 typ. 1.0 typ. 6.1 0.2 0.51 min. 4.0 min . 0.8 10.4 max. (9.8 typ.) 4.3 min. 1 4 23 1.14 max. 2.3 2.3 1. gate 2. drain 3. source 4. fin (drain) equivalent circuit remark the diode connected between t he gate and source of the transistor serves as a protector against esd. when this device actually used, an additional protection circuit is ex ternally required if a voltage exceeding the rated voltage ma y be applied to this device. source body diode gate protection diode gate drain
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